ライフサイエンスコーパス: sputtering

1 phire substrates by direct current magnetron sputtering.

2 metallic surfaces during and after C(60)(+) sputtering.

3 , followed by edge-selective electron recoil sputtering.

4 ed via innovative deposition methods such as sputtering.

5 nium oxide surface layers by Ar(+) and Ga(+) sputtering.

6 w and equipment-intensive techniques such as sputtering.

7 ansparency, but they are mostly deposited by sputtering.

8 nergy for Ca is independent of the extent of sputtering.

9 ene sheets by means of electron-beam-induced sputtering.

10 ical outflow region arising from atmospheric sputtering.

11 re deposited at room temperature by reactive sputtering.

12 ic fraction of 14% was prepared by magnetron sputtering.

13 ma (Sigma </= 29) CSL grain boundaries after sputtering.

14 lized zirconia substrates using RF magnetron sputtering.

15 trates by off-axis radio frequency magnetron sputtering.

16 FIB can sculpt nanostructures via localised sputtering.

17 ods such as sol-gel thin-film deposition and sputtering.

18 o define the sensor geometry followed by tin sputtering.

19 native for instruments equipped with C60(n+) sputtering.

20 and variation during graphene transfer and W sputtering.

21 uptake was greater than the rate of C(60)(+) sputtering.

22 as not observed with the commonly used Ar(+) sputtering.

23 d on a Si or K9-glass substrate by magnetron sputtering.

24 not previously visible with C(60)(+) cluster sputtering.

25 nothermite has been synthesized by magnetron sputtering a layer of Al film onto three-dimensionally o

26 In this contribution, DC magnetron sputtering, a physical vapor deposition technique, is ap

27 meter equipped with an argon cluster ion for sputtering and a bismuth liquid metal ion source for ana

28 chniques, including colloidal self-assembly, sputtering and atomic layer deposition, to fabricate pho

29 By employing the sputtering and e-beam lithography techniques, platinum n

30 f this study indicate that either solar wind sputtering and implantation are more important than micr

31 n a TEM provides real-time observation of Au sputtering and island formation with a spatial resolutio

32 Argon cluster ion sources for sputtering and secondary ion mass spectrometry use proje

33 DMS/glass chip fabricated using conventional sputtering and soft-lithography techniques.

34 ons between surface oxidants and organics or sputtering and/or outgassing of CO(2) endogenic to Rhea'

35 obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly depen

36 to the increase in protonation in polyatomic sputtering, and coronene was found to further reduce sup

37 graphic patterning, wet chemical etching, DC sputtering, and thermal wafer bonding.

38 e nanopatterned by normal incidence ion beam sputtering are age-dependent and slow down with sputteri

39 To explore C(60)(+) sputtering beyond low-damage depth profiling of organic

40 tacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, a

41 eviate the problems associated with C(60)(+) sputtering, but each method showed better improvement in

42 e atmospheric calcium may arise from surface sputtering by ions, which enter Mercury's auroral zone.

43 While ion sputtering causes a strong increase in the initial adsor

44 discharge operating conditions and resultant sputtering characteristics while a number of optical emi

45 FM) imaging of microspheres before and after sputtering confirmed that the PVA layer was removed afte

46 , the enhanced oxygen uptake due to C(60)(+) sputtering could be beneficial for SIMS analysis.

47 More extensive sputtering creates extended defects (such as steps and k

48 ater cluster beams lie on the same universal sputtering curve derived by Seah for argon cluster beams

49 to those extrapolated from C(60)(+) cluster sputtering data.

50 (0.1 mg cm(-2)) were manufactured by plasma sputtering deposition and scanning electron micrographs

51 We have now studied the rf magnetron sputtering deposition parameters to prepare ITO thin fil

52 of the electronic properties of SnOx film on sputtering deposition power is discovered experimentally

53 Argon ion-sputtering destroys the aged configuration, yielding a s

54 y with continuous spectra acquisition during sputtering (e.g., dynamic secondary ion mass spectrometr

55 differences, which can strongly affect local sputtering efficiencies.

56 ace at the plasma-water interface, including sputtering, electric field induced hydrated ion emission

57 spectroscopy paired with C60(+) cluster ion sputtering enables high-resolution analysis of the atomi

58 scape of carbon via CO photodissociation and sputtering enriches heavy carbon ((13)C) in the Martian

59 tron increased significantly during C(60)(+) sputtering, even though the instrument was under ultrahi

60 ilized zirconia (YSZ) substrates by off-axis sputtering followed by post-growth annealing.

61 d by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were gro

62 We develop bias-assisted sputtering for deposition of oriented Pt and Au films wi

63 n depending on the iodine/argon ratio in the sputtering gas.

64 Therefore, oxygen flooding during C(60)(+) sputtering has a great potential for enhancing the detec

65 of organic materials with argon cluster ion sputtering has recently become widely available with sev

66 chemical imaging coupled with Ar cluster ion sputtering has therefore been demonstrated as an emergin

67 angle deposition (GLAD) configuration in RF sputtering have been explored for potential application

68 luding melt-spinning, mechanical milling and sputtering, have been explored to prepare exchange-sprin

69 In contrast to C(60)(+) cluster sputtering, however, a negligible variation in sputterin

70 ms can be deposited economically by reactive sputtering in production-size equipment on a variety of

71 profiles by employing low energy atomic ion sputtering in the region of the metal layer.

72 Here we study graphene edges produced by sputtering in vacuum and direct measurements of the C-C

73 To understand the mechanisms of sputtering-induced damage by these ions, X-ray photoelec

74 d 250, 500, and 1000 eV Cs(+) and O(2)(+) as sputtering ions.

75 the migration behavior of Me(+) during O2(+) sputtering is given by switching the sputter beam from O

76 imes less, such that essentially zero damage sputtering is possible.

77 rdance with a previous report, argon cluster sputtering is shown to provide effectively constant sput

78 ned along the ITO line pattern and secondary sputtering lithography can change the shape of the ITO l

79 Samples manufactured by the sputtering method are analyzed along with samples prepar

80 repared by widely used electrodeposition and sputtering methods.

81 The analytical steady-state statistical sputtering model (SS-SSM) is utilized to interpret molec

82 analyzed using the steady-state statistical sputtering model (SS-SSM) to understand the nature of mo

83 We used the sputtering model developed by Wucher and co-workers to q

84 3 larger than the predictions of a DC plasma sputtering model.

85 In contrast, with Cs(+) and O(2)(+) sputtering, molecular ion signals decrease quickly to th

86 zed exosphere, presumably through solar-wind sputtering near the poles.

87 opper substrates followed by radio-frequency sputtering of carbon-nitride films, forming freestanding

88 vicinity of the imprinted sites: (1) direct sputtering of gold nanoparticles, (2) immobilization of

89 , and it is thought that O2 is formed by the sputtering of ice by energetic particles from the jovian

90 r particles and clusters and/or hydrodynamic sputtering of melted matrix.

91 g of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets.

92 i0.8Ge0.2 nano-meshed films fabricated by DC sputtering of Si0.8Ge0.2 on highly ordered porous alumin

93 phase microextraction (SPME) coatings by the sputtering of silicon onto silica fibers.

94 Light ion sputtering of the MgO(100) surface generates point defec

95 sms proposed to explain the resupply include sputtering of the surface by the solar wind, micrometeor

96 The direct current (DC) sputtering of titanium (Ti) on glass substrate has been

97 ounter electrode, respectively) deposited by sputtering on a flexible polyimide substrate.

98 l SERS substrates were then obtained with Au sputtering on the surface of the polymer nanostructure a

99 work explores the utility of metallic silver sputtering on tissue sections for high resolution imagin

100 depositing a gold thin film onto a TEPCM via sputtering or thermal evaporation.

101 A further increase in the sputtering power by only a few percent results in a dras

102 Our studies suggest that the sputtering power critically affects the stoichiometry of

103 rply switches from n-type to p-type when the sputtering power increases by less than 2%.

104 n thin-film transistors (TFTs) produced at a sputtering power just below a critical value (120 W).

105 In contrast, at just above the critical sputtering power, the p-type behavior is found to be the

106 nd the best subthreshold swing among all the sputtering powers that we have tested.

107 aphy technique and high step coverage of the sputtering process have been critical steps in this new

108 bricated, to which radio frequency magnetron sputtering process was then applied to deposit an alloye

109 ta, the top graphene layer is damaged by the sputtering process, and the acid treatment removes the d

110 he reconstruction of carbon atoms during the sputtering process.

111 t speeds orders of magnitude faster than the sputtering processes used to deposit ITO.

112 lated technical fields, surface treatment or sputtering processes, for example, and has hence been st

113 ss from the atmosphere by solar-wind-induced sputtering processes, making this process a potential ne

114 periments are designed to utilize the unique sputtering properties of cluster ion beams for molecular

115 The unique sputtering properties of the C60 ion beam result in succ

116 d also alleviate several problems, including sputtering rate decay, carbon deposition, and surface ro

117 carbon penetration, continuous decay of the sputtering rate, and a rough sputtered surface, hindered

118 Sputtering rates were related to the physical and chemic

119 vaporation, photon-stimulated desorption and sputtering releases material from the surface to form th

120 This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsi

121 nfirmed that the PVA layer was removed after sputtering revealing poly(lactic-co-glycolic) acid(PLGA)

122 deposited using physical (reactive magnetron sputtering, RMS) and chemical (atomic layer deposition,

123 l damage to the polymer layer, an Ar cluster sputtering source is used for depth profiling.

124 analysis, three of them using argon cluster sputtering sources and one using a C(60)(+) cluster sour

125 thod is implemented in a feedback-controlled sputtering system that provides fine control over ion be

126 conducting NiO thin film was deposited by RF sputtering technique and its properties were investigate

127 The rerouting of the sputtering technique to this purpose enabled collective

128 This work demonstrates that the rf-sputtering technique, combined with appropriate heat tre

129 ts are synthesized by the reactive-magnetron-sputtering technique.

130 deposited on gold coated glass prisms by RF sputtering technique.

131 d In, and undoped) deposited by the reactive sputtering technique.

132 ms are normally prepared by energy-intensive sputtering techniques or high-temperature solution metho

133 Advancements in sputtering technology-specifically, pulsed dc power and

134 We report a regime of ion beam sputtering that occurs for sufficiently steep slopes.

135 We observe that, with argon cluster sputtering, the position of the marker layers may change

136 ting water molecule is less than 0.6 meV and sputtering through momentum transfer during collisions o

137 d the coating thickness is controlled by the sputtering time.

138 ttering are age-dependent and slow down with sputtering time.

139 is work, we demonstrate the use of magnetron sputtering to deposit Mo2C as an efficient hydrogen evol

140 The applicability of direct on-tissue silver sputtering to LDI-IMS of cholesterol and other olefinic

141 e use of nitric oxide (NO) gas dosing during sputtering to reduce molecular cross-linking.

142 ITO films were deposited using dc magnetron sputtering under a variety of conditions that resulted i

143 s that are difficult to analyze with C60(n+) sputtering using conventional approaches/conditions.

144 +) simultaneously and sample rotation during sputtering were proposed as methods to reduce the above-

145 result of loss of gas to space by pickup-ion sputtering, which preferentially removes the lighter ato

146 ignals of both molecules remain stable under sputtering, while at room temperature, they gradually de

147 s were fabricated using radio-frequency (RF) sputtering with a single-crystal Cu target--a simple but

148 Sputtering with C(60)(+) provided the ability to remove

149 the surface which was readily removed under sputtering with C(60).

150 by in situ mass spectrometry using chemical sputtering with CF3+ ions (70 eV), ex situ secondary ion

151 During C(60)(+) sputtering, XPS spectra indicated that the degrees of ca

152 e erosion rate of material, analogous to the sputtering yield in secondary ion mass spectrometry.

153 For organic materials, the sputtering yield is high removing material to similar de

154 r when the displacement yield is low and the sputtering yield is high.

155 The results show that the total sputtering yield is largest relative to the product of t

156 determining at each incident angle the total sputtering yield of cholesterol molecules, the damage cr

157 The octane system has sputtering yield of ~150 nm(3) of which 85% is in intact

158 h Ar cluster ions, including a constant high sputtering yield throughout a depth of approximately 390

159 uttering, however, a negligible variation in sputtering yield with depth was observed and the repeata

160 file such as depth resolution, uniformity of sputtering yield, and topography are evaluated between 9

161 Nevertheless, owing to its high sputtering yield, cluster C60(+) ion removes and masks t

162 large information depth because of the large sputtering yield.

163 d 5 keV for the argon clusters, and both the sputtering yields and depth resolutions are similar to t

164 The total sputtering yields for water ice due to kiloelectronvolt

165 th was observed and the repeatability of the sputtering yields obtained by two participants was bette

166 ing is shown to provide effectively constant sputtering yields through these reference materials.