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極端紫外線リソグラフィ

出典: フリー百科事典『ウィキペディア（Wikipedia）』 (2023/10/18 13:59 UTC 版)

極端紫外線リソグラフィ (Extreme ultraviolet lithography、略称：EUVリソグラフィ または EUVL) は、極端紫外線（英語版）、波長13.5 nmにて露光する次世代露光技術である。


参照
  1. ^ SEMICON West 2016」、半導体露光技術の進化を振り返る（完結編その2）, http://eetimes.jp/ee/articles/1608/30/news022.html 
  2. ^ webelements.com
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  7. ^ Trintchouk, F.; et al. (2006). “XLA-300: the fourth-generation ArF MOPA light source for immersion lithography”. Proc. SPIE 6154: 615423. doi:10.1117/12.658723. 
  8. ^ V. Bakshi, 2009 EUVL Workshop Summary, Sheraton Waikiki, Hawaii, July 13--17, 2009.
  9. ^ Cymer EUV light source
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  14. ^ ASML update on ADT
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  59. ^ EUV resist TWG 2008
  60. ^ Intel extending ArF lithography to 11 nm node
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  62. ^ J. Chen, 2011 IMEC Technology Forum
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  76. ^ Y. Tanaka et al., Proc. SPIE 6921, 69211D (2008).
  77. ^ A. G. Caster et al., J. Vac. Sci. Tech. B 28, 1304 (2010).
  78. ^ GlobalFoundries plans EUV by 2015
  79. ^ H. Feldmann et al., Proc. SPIE 7636, 76361C (2010).
  80. ^ S. Lombardo et al., J. Appl. Phys., 84, 472 (1998).
  81. ^ M. Dapor et al., J. Micro/Nanolith. MEMS MOEMS 9, 023001 (2010).
  82. ^ C. Kittel, Introduction to Solid State Physics, 6th ed. (John Wiley & Sons, 1986), pp. 281-3.
  83. ^ P. T. Henderson et al., Proc. Natl. Acad. Sci. USA 96, 8353-8358 (1999).
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  85. ^ D. Emfietzoglou et al., Nucl. Instr. & Meth. in Phys. Res. B 267, 45--52 (2009).
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  89. ^ K. Murata, J. Appl. Phys. 57, 575 (1985).
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  92. ^ V. V. Ivin et al., Micr. Eng. 61-62, 343-349 (2002).
  93. ^ R. Renoud et al., J. Phys. Cond. Matt. 10, 5821-5832 (1998).
  94. ^ K. Wilder et al., J. Vac. Sci. Tech. B 16, 3864 (1998).
  95. ^ V. W. Ballarotto et al., JVST B 20, 2514-2518 (2002).
  96. ^ M. Kotera et al., Microprocesses and Nanotechnology, 2007 Digest of Papers, pp. 94--95 (2007).
  97. ^ M. Kotera et al., Jap. J. Appl. Phys. vol. 47, pp. 4944--4949 (2008).
  98. ^ A. Ritucci et al., "Damage and ablation of large band gap dielectrics induced by a 46.9 nm laser beam," March 9, 2006 report UCRL-JRNL-219656 (Lawrence Livermore National Laboratory).
  99. ^ T. Kozawa et al., Appl. Phys. Exp. 1, 027001 (2008).
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  102. ^ J. Drucker and M. R. Scheinfein, Phys. Rev. B vol. 47, 15973-15975 (1993).
  103. ^ EUV-IL at PSI
  104. ^ XIL beamline at PSI
  105. ^ V. Auzelyte et al., J. Micro/Nanolith. MEMS MOEMS 8, 021204 (2009).
  106. ^ K.B.Nguyen et al., J. Vac. Sci. Tech. B 14, 4188 (1996).
  107. ^ S. Yang et al., IEDM '98 Technical Digest, pp. 197-200 (1998).
  108. ^ B. La Fontaine et al., Proc. SPIE 6921, 69210P (2008).
  109. ^ AMD uses EUV to pattern metal layer in 45 nm test chip
  110. ^ B. Haavind and J. Montgomery, "SPIE: AMD, IBM tip first "full-field" EUV chip," Solid State Technology, Feb. 27, 2008
  111. ^ O. R. Wood II et al., Proc. SPIE 6517, 65170U (2007).
  112. ^ IMEC report on EUV printing of contacts
  113. ^ IMEC Makes 22 nm SRAM Cells With EUV Lithography
  114. ^ J. J. Biafore et al., SPIE Lithography Asia 2009, Proc. SPIE 7520, 75201P (2009).
  115. ^ KLA-Tencor brings stochastic modeling to EUV
  116. ^ T. I. Wallow et al., Proc. SPIE 7273, 72733T (2009).
  117. ^ EUVA: 2nd EUVL Symposium at Antwerp, Belgium (2003)
  118. ^ "Intel's extreme ultraviolet dream still somewhere over the rainbow."
  119. ^ High-Power EUV lithography lightsources come of age,http://www.electroiq.com/index/display/semiconductors-article-display/368295/articles/solid-state-technology/volume-52/issue-9/features/cover-article/high-power-euv-lithography-lightsources-come-of-age.html
  120. ^ Taking Semiconductor Manufacturing to the extreme, http://www.photonics.com/Article.aspx?AID=40103
  121. ^ SEMICON West - Lithography Challenges and Solutions
  122. ^ P.Naulleau et al., Pushing EUV lithography development beyond 22-nm half pitch, LBNL Paper LBNL-2288E (2010).
  123. ^ TSMC to take delivery of EUV lithography system in 2011
  124. ^ TSMC facing EUV, Wafer Cost Challenges.
  125. ^ H. Meiling, "EUVL - getting ready for volume introduction," Semicon West, July 14, 2010.
  126. ^ O. Wood and B. LaFontaine, Source Power Requirement for HVM.
  127. ^ U. S. Patent 6977715.
  128. ^ H-W Kim et al., Proc. SPIE vol. 7636, 76360Q (2010).
  129. ^ S. A. George et al., Proc. SPIE vol. 7636, 763626 (2010).
  130. ^ H. Mizuno et al., Proc. SPIE vol. 7271, 72710U (2009).
  131. ^ P. P. Naulleau et al., Proc. SPIE 7636, 76362H (2010).
  132. ^ L. W. Shive and B. L. Gilmore, ECS Trans. vol. 16, 401-405 (2008).
  133. ^ T-S. Eom et al., Proc. SPIE 7271, 727115 (2009).
  134. ^ EETimes article on NAND Flash scaling 3/22/2010.
  135. ^ C. Taylor, "Samsung intros 64-Gbit MLC NAND chip," Electronic News, October 23, 2007.
  136. ^ M. LaPedus, Intel, Micron roll 34-nm NAND device, EETimes, 5/29/2008.
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  138. ^ E. S. Putna et al., Proc. SPIE vol. 7969, 79692K (2011).
  139. ^ e.g., US Patent Application 20090153826
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  141. ^ Semiconductor International 9/14/2009 Intel Ramping 32 nm Manufacturing in Oregon
  142. ^ EETimes 9/22/2009 Otellini: Intel to ship more SOCs than PC CPUs -- someday
  143. ^ 22 nm HP Integrated Patterning Improvements for EUVL
  144. ^ Intel Confirms Production of 22nm Processors for late 2011
  145. ^ Sematech launches EUV metrology consortium
  146. ^ SanDisk, 2/26/2010 Investor Day.
  147. ^ T. Matsuyama et al., 2006 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 50-56 (2006).
  148. ^ J. Cobb et al., "Flare compensation in EUV Lithography," 2003 EUV Symposium, Antwerp.
  149. ^ ASML, 2009 Lithography Workshop.
  150. ^ ASML, Mask TWG, EUVL Symposium, 2008.
  151. ^ K. Murakami et al., Proc. SPIE 8322, 832215 (2012).
  152. ^ Y. Sekine et al., 1st International EUVL Symposium, 2002.
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  156. ^ D2S announces litho tradeoffs at 20 nm and below
  157. ^ W. Chao et al., JVST B 27, 2606-2611 (2009).
  158. ^ W. Chao et al., Proc. SPIE vol. 6883, 688309 (2008).
  159. ^ 2009 Sokudo Lithography Breakfast Forum
  160. ^ EUV late for 10 nm
  161. ^ ASML's EUV Roadmap Points to New Wavelength
  162. ^ Cymer EUV roadmap slips
  163. ^ Samsung resets EUV roadmap for memory scaling
  164. ^ Foundry rivals say EUV not ready for prime time
  165. ^ EUV misses 14 nm node
  166. ^ R. Peeters and S. Young, ASML Images 2012 Issue 1, p. 4.
  167. ^ ASML EUV tool update
  168. ^ Samsung and SKHynix EUV order
  169. ^ H. S. Kim, Future of Memory Devices and EUV Lithography, 2009 EUV Symposium
  170. ^ H. Mizoguchi, "Laser Produced Plasma EUV Light Source Gigaphoton Update," EUVL Source Workshop, May 12, 2008.

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